NCE40P06J mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -40V,ID = -6A RDS(ON) < 33mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V
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S Schematic diagram
* Advanced trench MOSFET process technology
* Ultra low .
General Features
* VDS = -40V,ID = -6A RDS(ON) < 33mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V
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S Schematic diagr.
The NCE40P06J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.
General Features
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